? 1/8 table 1: main product characteristics i f(av) 2 a v rrm 600 v t j 175c v f (typ) 1 v t rr (typ) 35 ns stth2r06 high efficiency ultrafast diode table 3: absolute ratings (limiting values) symbol parameter value unit v rrm repetitive peak reverse voltage 600 v i f(rms) rms forward voltage 7 a i f(av) average forward current = 0.5 do-41 tl = 70c 2 a sma tl = 85c 2 smb tl = 100c 2 i fsm surge non repetitive forward current do-41 tp = 10ms sinusoidal 40 a sma / smb 30 t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature 175 c sma STTH2R06A smb stth2r06u do-41 stth2r06 k a september 2004 rev. 1 features and benefits very low conduction losses negligible switching losses low forward and reverse recovery times high junction temperature description the stth2r06 is using st turbo 2 600v planar pt doping technology. it is specially suited for switching mode base drive & transistor circuits. packaged in axial, sma and smb, this device is intended for use in high frequency inverters, free wheeling and polarity protection. table 2: order codes part number marking stth2r06 stth2r06 stth2r06rl stth2r06 part number marking STTH2R06A r6a stth2r06u r6u
stth2r06 2/8 table 4: thermal resistance table 5: static electrical characteristics pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 1 x i f(av) + 0.125 i f 2 (rms) table 6: dynamic characteristics symbol parameter value (max). unit r th(j-l) junction to lead do-41 l = 5 mm 35 c/w sma 30 smb 25 symbol parameter test conditions min. typ max. unit i r * reverse leakage current t j = 25c v r = v rrm 2a t j = 150c 12 85 v f ** forward voltage drop t j = 25c i f = 2a 1.7 v t j = 150c 1.0 1.25 symbol parameter test conditions min. typ max. unit t rr reverse recovery time t j = 25c i f = 0.5a irr = 0.25a i r =1a 30 ns i f = 1a di f /dt = -50 a/s v r =30v 35 50 t fr forward recovery time t j = 25c i f = 2a di f /dt = 100 a/s v fr = 1.1 x v fmax 100 ns v fp forward recovery voltage 10 v
stth2r06 3/8 figure 1: conduction losses versus average forward current figure 2: forward voltage drop versus forward current figure 3: relative variation of thermal impedance junction to case versus pulse duration (sma - s cu = 1cm 2 ) figure 4: relative variation of thermal impedance junction to case versus pulse duration (smb - s cu = 1cm 2 ) figure 5: relative variation of thermal impedance junction to case versus pulse duration (do-41) figure 6: peak reverse recovery current versus di f /dt (typical values) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 p(w) i (a) f(av) t =tp/t tp = 0.05 = 0.1 = 0.2 = 1 = 0.5 0 1 2 3 4 5 6 7 8 9 10 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 i (a) fm v (v) fm t =150c (typical values) j t =25c (maximum values) j t =150c (maximum values) j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 z/r th(j-a) th(j-a) single pulse t (s) p 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 z/r th(j-a) th(j-a) single pulse t (s) p 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 z/r th(j-a) th(j-a) single pulse t (s) p 0 1 2 3 4 5 6 7 8 9 0 50 100 150 200 250 300 350 400 450 500 i (a) rm di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =400v t =125c r j
stth2r06 4/8 figure 7: reverse recovery time versus di f /dt (typical values) figure 8: reverse recovery charges versus di f / dt (typical values) figure 9: relative variations of dynamic parameters versus junction temperature figure 10: transient peak forward voltage versus di f /dt (typical values) figure 11: forward recovery time versus di f /dt (typical values) figure 12: junction capacitance versus reverse voltage applied (typical values) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450 500 t (ns) rr di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =400v t =125c r j 0 50 100 150 200 250 300 350 400 0 100 200 300 400 500 q (nc) rr i =2 x i ff(av) i =0.5 x i ff(av) di /dt(a/s) f i=i ff(av) v =400v t =125c r j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 i rm q rr t rr t (c) j i=i reference: t =125c ff(av) j v =400v r 0 5 10 15 20 25 30 0 50 100 150 200 250 v (v) fp di /dt(a/s) f i=i t =125c ff(av) j 0 50 100 150 200 250 300 0 50 100 150 200 250 t (ns) fr di /dt(a/s) f i=i t =125c ff(av) j v =1.1 x v max. fr f 1 10 100 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j
stth2r06 5/8 figure 15: sma package mechanical data figure 13: thermal resistance junction to ambient versus copper surface under each lead (epoxy fr4, e cu =35m) (sma / smb) figure 14 : thermal resistance versus lead length (do-41) figure 16: sma foot print dimensions (in millimeters) 0 20 40 60 80 100 120 01122334455 r (c/w) th(j-a) sma smb s (cm2) cu 0 20 40 60 80 100 120 5 10152025 r (c/w) th l (mm) lead r th(j-a) r th(j-l) e c l e1 d a1 a2 b 1.45 2.40 1.65 1.45 ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.70 0.075 0.106 a2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 e 4.80 5.60 0.189 0.220 e1 3.95 4.60 0.156 0.181 d 2.25 2.95 0.089 0.116 l 0.75 1.60 0.030 0.063
stth2r06 6/8 figure 17: smb package mechanical data figure 18: smb foot print dimensions (in millimeters) e c l e1 d a1 a2 b 1.52 2.75 2.3 1.52 ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 e 5.10 5.60 0.201 0.220 e1 4.05 4.60 0.159 0.181 d 3.30 3.95 0.130 0.156 l 0.75 1.60 0.030 0.063
stth2r06 7/8 figure 19: do-41 package mechanical data ca b o / o / d o / d c table 7: ordering information part number marking package weight base qty delivery mode stth2r06 stth2r06 do-41 0.34 g 2000 ammopack stth2r06rl stth2r06 do-41 0.34 g 5000 tape & reel STTH2R06A r6a sma 0.068 g 5000 tape & reel stth2r06u r6u smb 0.11 g 2500 tape & reel ref. dimensions millimeters inches min. max. min. max. a 4.07 5.20 0.160 0.205 b 2.04 2.71 0.080 0.107 c28 1.102 d 0.712 0.863 0.028 0.034 table 8: revision history date revision description of changes 07-sep-2004 1 first issue
stth2r06 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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